IBM said Monday it has built the world's tiniest transistor, at least 10 times smaller than those found in today's state-of-the-art computer chips. The announcement was made at the annual ...

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National ...

Cree, Inc. announces the sample release of a 90W, highly efficient GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, radar, tactical ...

Funding worth £1.34million has been awarded to semiconductor specialist Diamond Microwave Devices and its partners by Government funded body the Technology Strategy Board. The investment, through the ...

Schematic and operation of a capacitorless active-matrix micro-LED pixel, where a single memristor (1M) substitutes both the storage capacitor and the driving TFT. The compact 1M cell can be ...

Transport phenomena in semiconductors, theory of the p-n junction, bipolar and unipolar devices, general analysis of the metal-semiconductor and MIS structures, CCD, MOSFET and bipolar transistors.

As part of an international collaboration, scientists at Chalmers University of Technology have demonstrated how noise in a microwave amplifier is limited by self-heating at very low temperatures. The ...